Transphorm, Inc.—global provider of fundamentally superior, quantitatively outperforming GaN power semiconductors— has been awarded a contract for up to $15 million from the National Security Technology Accelerator (NSTXL). The contract is for the ECLIPSE Project, under which Transphorm is commissioned to manufacture advanced GaN epiwafers.
What does contract mean for Transphorm?
The firm’s opportunity to contribute to this Project underscores Transphorm’s IP, knowledge, and expertise in the advanced GaN materials sector as well as its MOCVD manufacturing infrastructure. Its experience in GaN epiwafer design, development, and production of various breakthrough high voltage GaN platforms spans more than ten years. These initiatives constitute multiple verticals for the semiconductor pioneer’s Power and RF GaN businesses.
Commenting on the funding, Umesh Mishra, CTO and Co-founder, Transphorm, said, “Inarguably, the value of and potential for advanced GaN materials is clear in a wide range of applications. We’ve developed multiple high power density platforms that generate record performance and efficiency advantages suited for power conversion and RF applications.”
“This type of innovation is where Transphorm excels because of its strong core epi materials versatility coupled with its device and manufacturing capabilities. We’ve worked to evolve and better all GaN tech aspects —materials, design, and process. We look forward to execution on the ECLIPSE program, enhancing our capability to supply advanced GaN epiwafers.”
The contract proposal process was administered by the National Security Technology Accelerator (NSTXL) as an OTA (Other Transaction Agreement).
